NPT1007 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 200W RF Power Transistor

NPT1007
Gallium Nitride 28V, 200W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for narrowband and broadband
applications from from DC – 1200MHz
• 200W P_3dB CW power at 900MHz in quadrature
combined or push-pull configuration
• 90W CW power from 500-1000MHz in application
design AD-014
• High efficiency from 14V to 28V
• 1.0 °C/W R_TH with maximum T_J rating of 200°C
• Robust up to 10:1 VSWR mismatch at all angles
with no device degradation
• Subject to EAR99 export control
DC – 1200 MHz
14 – 28 Volt
GaN HEMT
RF Specifications (CW): V_DS = 28V, I_DQ = 1400mA¹, Frequency = 900MHz, T_A = 25°C, Measured in Nitronex Quadrature
Combined Test Fixture².
Symbol Parameter
Min
Typ
Max
Units
P_3dB
Average Output Power at 3dB Gain Compression
52.0
53.0
-
dBm
G_SS
Small Signal Gain
17.3
18.3
-
dB
h
Drain Efficiency at 3dB Gain Compression²¹
57
63
-
%
VSWR 10:1 VSWR at all phase angles
No change in device performance
Note 1: 700mA per transistor. Each gate should be biased independently to set desired I_DQ.
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
Typical 2-Tone Performance: V_DS = 28V, I_DQ = 1400mA¹, Frequency = 900MHz, Tone spacing = 1MHz, T_A = 25°C
Measured in Nitronex Quadrature Combined Test Fixture² .
Symbol Parameter
Typ
Units
P_3dB,PEP Peak Envelope Power at 3dB Gain Compression
53.4
P_1dB,PEP Peak Envelope Power at 1dB Gain Compression
52.6
P_IMD3
Peak Envelope Power at -35dBc IMD3
50.8
Note 1: 700mA per transistor. Each gate should be biased independently to set desired I_DQ.
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
dBm
dBm
dBm
NPT1007
Page 1
NDS-012 Rev. 3, April 2013