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MMC3316XMT Datasheet, PDF (4/13 Pages) List of Unclassifed Manufacturers – The MMC3316xMT is a complete 3-axis magnetic sensor with on-chip signal processing and integrated I2C bus.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (VDD) ………………...-0.5 to +3.6V
Storage Temperature ……….……-55C to +125C
Maximum Exposed Field ………………..10000 gauss
*Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; the functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect the
device‟s reliability.
Pin Description: LGA Package
Pin Name Description
I/O
1 VDA Power Supply
P
2
Vpp Factory Use Only, Leave Open NC
3 TEST Factory Use Only, Leave NC
Open/No Connection
4
C+ Short together
I
5
C-
I
6 CAP Connect to External Capacitor I
7
SCL Serial Clock Line for I2C bus
I
8 VDD Power Supply for I2C bus
P
9 SDA Serial Data Line for I2C bus
I/O
10 VSA Connect to Ground
P
All parts are shipped in tape and reel packaging with
9000pcs per 13” reel or 3000pcs per 7” reel.
Caution: ESD (electrostatic discharge) sensitive
device.
Ordering Guide:
MMC3316xMT
Package type:
Code
T
Type
LGA10
RoHS compliant
Performance Grade:
Code
Performance Grade
M
Temp compensated
Address code: 0~7
Code 7bit I2C Address
0
0110000b
1
0110001b
2
0110010b
3
0110011b
4
0110100b
5
0110101b
6
0110110b
7
0110111b
Marking illustration:
1 10
2
9
3
502XXX
+
8
45
7
6
+
+
Number
5x
50
51
52
53
54
55
56
57
Part number
MMC33160MT
MMC33161MT
MMC33162MT
MMC33163MT
MMC33164MT
MMC33165MT
MMC33166MT
MMC33167MT
“Number” means the 1st two digits of the 1st line in the
marking. The 3rd digit in the 1st line represents Year Code
(2 stands for 2012), the 2nd line represents Lot Number.
Small circle indicates pin one (1).
THEORY:
The anisotropic magnetoresistive (AMR) sensors are
special resistors made of permalloy thin film deposited
on a silicon wafer. During manufacturing, a strong
magnetic field is applied to the film to orient its
magnetic domains in the same direction, establishing
a magnetization vector. Subsequently, an external
magnetic field applied perpendicularly to the sides of
the film causes the magnetization to rotate and
change angle. This in turn causes the film‟s resistance
to vary. The MEMSIC AMR sensor is incorporated into
a Wheatstone bridge, so that the change in resistance
is detected as a change in differential voltage and the
strength of the applied magnetic field may be inferred.
However, the influence of a strong magnetic field
(more than 25 gausses) in any direction could upset,
or flip, the polarity of the film, thus changing the sensor
characteristics. A strong restoring magnetic field must
be applied momentally to restore, or set, the sensor
characteristics. The MEMSIC magnetic sensor has an
on-chip magnetically coupled strap: a SET/RESET
strap pulsed with a high current, to provide the
restoring magnetic field.
MEMSIC MMC3316xMT Rev.A
Page 4 of 13
8/10/2012