71256L25YG Datasheet, PDF (4/10 Pages) List of Unclassifed Manufacturers – CMOS Static RAM 256K (32K x 8-Bit)

IDT71256S/L
CMOS Static RAM 256K (32K x 8-Bit)
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2946 tbl 09
Military, Commercial, and Industrial Temperature Ranges
5V
5V
DATA OUT
255Ω
480Ω
30pF*
,
2946 drw 04
DATA OUT
255Ω
480Ω
5pF*
,
2946 drw 05
Figure 1. AC Test Load
Figure 2. AC Test Load
(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)
*Includes scope and jig capacitances
DC Electrical Characteristics (VCC = 5.0V ± 10%)
IDT71256S
Symbol
Parameter
Test Conditions
Min. Typ. Max.
|ILI| Input Leakage Current VCC = Max.,
MIL.
____
____
10
VIN = GND to VCC
COM"L & IND.
____
____
5
|ILO| Output Leakage Current VCC = Max., CS = VIH, MIL.
____
____
10
VOUT = GND to VCC
COM"L & IND.
____
____
5
VOL Output Low Voltage
IOL = 8mA, VCC = Min.
____
____
0.4
IOL = 10mA, VCC = Min.
____
____
0.5
VOH Output High Voltage
IOH = -4mA, VCC = Min.
2.4
____
____
IDT71256L
Min. Typ. Max. Unit
____
____
____
____
5
µA
2
____
____
____
____
5
µA
2
____
____
0.4
V
____
____
0.5
2.4
____
____
V
2946 tbl 10
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)
Typ.⁽¹⁾
VCC @
Max.
VCC @
Symbol
VDR
ICCDR
Parameter
VCC for Data Retention
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
Test Condition
Min.
____
2.0
MIL.
____
COM'L. & IND.
____
CS > VHC
0
2.0V
____
____
____
____
3.0V
____
____
____
____
2.0V
____
500
120
____
3.0V
____
800
200
____
tR⁽³⁾
Operation Recovery Time
tRC⁽²⁾
____
____
____
____
NOTES:
1. TA = +25°C.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
4
Unit
V
µA
ns
ns
2946 tbl 11