HBL5006 Datasheet, PDF (3/7 Pages) ON Semiconductor – LED Shunt HBL5006 Series

HBL5006 Series
ELECTRICAL CHARACTERISTICS (Unless otherwise noted: T_A = 25°C)
Symbol
Characteristics
Package Min
Typ
Max Unit
V_BR
Breakdown Voltage: The minimum voltage across the device in or
SOD−323 6.2
7.0
V
at the breakdown region. Measured at I_BR = 1 mA.
SOD−523 6.2
7.0
SOD−923 6.2
7.0
I_H
Holding Current: The minimum current required to maintain the
device in the on-state.
SOD−323
SOD−523
25
40
mA
25
40
SOD−923
25
40
I_L
Latching Current: The minimum current required to turn from the
SOD−323
9.0
mA
off-state to the on-state.
SOD−523
9.0
SOD−923
9.0
V_BO
Breakover Voltage: The voltage across the device in the breakover SOD−323 6.5
7.2
8.0
V
region.
SOD−523 6.5
7.2
8.0
SOD−923 6.5
7.2
8.0
I_R
Off−State Current: The dc value of current that results from the
application of the off-state voltage. Measured at 3.3 V.
SOD−323
SOD−523
1.0
mA
1.0
SOD−923
1.0
V_T
On−State Voltage. Measured at 100 mA.
SOD−323 0.9
1.1
1.3
V
SOD−523 0.9
1.1
1.3
SOD−923 0.9
1.1
1.3
V_C
Clamping Voltage
SOD−323
6.5
V
TLP (Note 4)
11.2
} I_PP = 8 A
IEC 6100−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
SOD−523
6.5
11.2
} ^IPP ^{= 16 A}
IEC 6100−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
SOD−923
6.5
11.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model TLP conditions: Z₀ = 50 W,
t_p = 100 ns, t_r = 4 ns, averaging window; t₁ = 30 ns to t₂ = 60 ns.
Current
On−state
Current
Holding Current
Latching Current
Voltage
Off−state
Current
Breakdown
Voltage
Breakover
Voltage
Figure 1. I−V Characteristics
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