5962-90899 Datasheet, PDF (7/27 Pages) List of Unclassifed Manufacturers – MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions
Group A Device
Limits
Units
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Subgroups type
Min
Max
DC CHARACTERISTICS - Continued
VPP erase current
Low level input
voltage
IPP3
VIL
VPP = VPPH erasure in progress 1, 2, 3
1, 2, 3
All
30 2/ mA
All
-0.5 2/ 0.8
V
High level input
voltage (TTL)
VIH1
1, 2, 3
All
2.0
VC2/C+ 0.5 V
High level input
voltage (CMOS)
VIH2
1, 2, 3
All
0.7 VCC VC2/C+ 0.5 V
Low level output
voltage
VOL
IOL = 2.1 mA, VCC = VCC min
1, 2, 3
All
0.45
V
High level output
VOH1 IOH = -2.5 mA, VCC = VCC min 1, 2, 3
All
2.4
V
voltage (TTL)
High level output
voltage (CMOS)
VOH2 IOH = -2.5 mA, VCC = VCC min _{1, 2, 3}
All
0.85 VCC
V
VOH3 IOH = -100 µA, VCC = VCC min
V2C/C- 0.4
V
A9 auto select
voltage
VID
A9 = VID
1, 2, 3
All
11.5
13.0
V
A9 auto select
current
IID
A9 = VID max, VCC = VCC max 1, 2, 3
All
500 2/ µA
VPP during read
only operations
VPPL
VoPpPerdautrioinngsread/write VPPH
NOTE: erase/program are
inhibited when VPP = VPPL
1, 2, 3
1, 2, 3
All
0
VCC+ 2.0 V
2/
All
11.4
12.6
V
Functional tests
See 4.4.1d
7, 8A, 8B All
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-90899
SHEET
7