5962-90899 Datasheet, PDF (16/27 Pages) List of Unclassifed Manufacturers – MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

Command definitions, device types 01-09
Command
Read memory
Read auto select codes 4/
Setup erase/erase
Erase verify
Setup program/program
Program verify
Reset 5/
BUS
cycles
required
1
2
2
2
2
2
2
First BUS cycle
Second BUS cycle
Operation
1/
Write
Write
Write
Write
Write
Write
Write
Address Data
2/
3/
X 00H/FFH
X 90H/80H
X
20H
EA
A0H
X
40H
X
C0H
X
FFH
Operation
1/
Read
Read
Write
Read
Write
Read
Write
Address
2/
RA
IA
X
X
PA
X
X
Data
3/
RD
ID
20H
EVD
PD
PVD
FFH
1/ Refer to BUS operations for definitions.
2/ RA = Address of the memory location to be read.
IA = Identifier address: 00H/01H for manufacturer code, 01H/A7H for device code.
EA = Address of memory location to be read during erase verify.
PA = Address of memory location to be programmed.
Address are latched on the falling edge of the write-enable pulse.
3/ RD = Data read from location RA during read operation.
ID = Data read from location IA during device identification.
EVD = Data read from location EA during erase verify.
PD = Data to be programmed at location PA. Data is latched on the rising edge of write-enable.
PVD = Data read from location PA during program verify. PA is latched on the program command.
4/ Following the read Auto Select code ID command, two read operations access manufacturer and device codes.
5/ The second bus cycle must be followed by the desired command register write.
Command definitions, device types 10-13
Command
Read memory
Read auto select codes 4/
Embedded erase setup/erase
Embedded program
setup/program
Reset 5/
BUS
cycles
required
1
3
2
2
First BUS cycle
Operation
1/
Write
Write
Write
Write
Address
2/
X
X
X
X
Data
3/
00H/FFH
80H/90H
30H
10H/50H
Second BUS cycle
Operation Address Data
1/
2/
3/
Read
RA
RD
Read 00H/01H 01H/A2H
Write
X
30H
Write
PA
PD
2
Write
X
FFH
Write
X
FFH
1/ Refer to BUS operations for definitions.
2/ RA = Address of the memory location to be read.
PA = Address of memory location to be programmed.
Address are latched on the falling edge of the W E pulse.
3/ RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of W E .
4/ Following the read Auto Select code ID command, two read operations access manufacturer and device codes.
5/ The second bus cycle must be followed by the desired command register write.
FIGURE 3. Truth tables - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-90899
SHEET
16