5962-90899 Datasheet, PDF (6/27 Pages) List of Unclassifed Manufacturers – MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
u-n5l5e4s.5Cs ^Vot^hTeCVrCw^iCs+e1^{2s5p5.e5CcVifi1e/d}
DC CHARACTERISTICS
Input leakage
current
Output leakage
current
ILI
VVCINC==VVCCCCmmaaxxo,r _VSS
ILO
VVCOCUT==VCVCCCmmaxa,x _{or VSS}
Group A Device
Subgroups type
Limits
Min
Max
Units
1, 2, 3
All
1, 2, 3
All
±1.0
µA
±10
µA
VCC standby
current (TTL)
ICCS1 VCC = VCC max, C E = VIH
1, 2, 3
All
VCC standby
current (CMOS)
VcCuCrreancttive read
VCC programming
current
ICCS2
ICC1
ICC2
C E = VCC ±0.2 V,
VCC = VCC max
VIOCUCT==V0CmCAm, _{fa=x,6C .0E M=HVzI,L}
O E = VIH
C E = VIL, programming in
progress
1, 2, 3
All
1, 2, 3
All
1, 2, 3
All
VcCuCrreenrat se
ICC3
C E = VIL, erasure in progress
1, 2, 3
All
VcPuPrrsetnatndby
IPPS VPP = VPPL
1, 2, 3
All
1.0
mA
100
µA
30
mA
30 2/ mA
30 2/ mA
±10
µA
VPP read current
IPP1
VPP = VPPH
VPP = VPPL
1, 2, 3
All
200
µA
±10
VPP programming
IPP2
VPP = VPPH, programming in
1, 2, 3
All
current
progress
See footnotes at end of table.
30 2/ mA
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-90899
SHEET
6