5962-90899 Datasheet, PDF (9/27 Pages) List of Unclassifed Manufacturers – MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions
Group A Device
Limits
Units
u-n5l5e4s.5Cs ^Vot^hTeCVrCw^iCs+e1^{2s5p5.e5CcVifi1e/d}
Subgroups
type
Min
Max
AC CHARACTERISTICS - READ ONLY OPERATIONS - Continued. (See figure 5 as applicable.)
Output enable
access time
tGLQV
9, 10, 11
01,05
02,06
03,07,10,
11,12
04,08,13
09
65
ns
60
55
50
40
Chip enable to
output in low Z
tELQX
9, 10, 11 All
0 2/
ns
Chip disable to
output in high Z
tEHQZ 2/
9, 10, 11 All
55
ns
Output enable to
output in low Z
tGLQX
9, 10, 11 All
0 2/
ns
Output disable to
output in high Z
tGHQZ 2/
9, 10, 11
01,05
02,06
03,07,10,
11,12
04,08,09,
13
60
ns
45
35
30
Output hold from
address, CE , or
OE change
tAXQX 3/
9, 10, 11 All
0 2/
ns
Write recovery
time before read
tWHGL
9, 10, 11 All
6.0
µs
ERASE AND PROGRAMMING PERFORMANCE
Chip erase
Excludes 00H programming 9, 10, 11 All
60
s
Chip program
Excludes system overhead 4/ 9, 10, 11 All
24
s
1/ Case temperatures are instant on.
2/ Parameters shall be tested as part of device initial characterization and after design and process change. Parameter
shall be guaranteed to the limits specified in table I for all lots not specifically tested.
3/ Whichever occurs first.
4/ Minimum byte programming time excluding system overhead is 16 µs (10 µs programming +6.0 µs write recovery), while
maximum is 400 µs/byte (16 µs x 25 loops allowed by algorithm). Maximum chip programming time is specified lower
than the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst
case byte.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-90899
SHEET
9