HX6356 Datasheet, PDF (7/12 Pages) List of Unclassifed Manufacturers – 32K x 8 STATIC RAM-SOI

HX6356
WRITE CYCLE AC TIMING CHARACTERISTICS (1)
Symbol
Parameter
Typical (2)
Worst Case (3)
Min
Max
Units
TAVAVW
TWLWH
TSLWH
Write Cycle Time (4)
Write Enable Write Pulse Width
Chip Select to End of Write Time
13
25
ns
9
20
ns
10
20
ns
TDVWH
TAVWH
Data Valid to End of Write Time
Address Valid to End of Write Time
5
15
ns
9
20
ns
TWHDX
TAVWL
TWHAX
TWLQZ
TWHQX
TWHWL
TEHWH
Data Hold Time after End of Write Time
Address Valid Setup to Start of Write Time
Address Valid Hold after End of Write Time
Write Enable to Output Disable Time
Write Disable to Output Enable Time
Write Disable to Write Enable Pulse Width(5)
Chip Enable to End of Write Time
0
0
ns
0
0
ns
0
0
ns
3
0
9
ns
9
5
ns
4
5
ns
12
20
ns
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading >50 pF, or equivalent capacitive
load of 5 pF for TWLQZ.
(2) Typical operating conditions: VDD=5.0 V, TA=25°C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55 to 125°C, post total dose at 25°C.
(4) TAVAVW = TWLWH + TWHWL
(5) Guaranteed but not tested.
TAVAVW
ADDRESS
NWE
TAVWL
TWHWL
DATA OUT
HIGH
IMPEDANCE
TWLQZ
TAVWH
TWLWH
TDVWH
TWHAX
TWHQX
TWHDX
DATA IN
DATA VALID
NCS
CE
TSLWH
TEHWH
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