HX6356 Datasheet, PDF (5/12 Pages) List of Unclassifed Manufacturers – 32K x 8 STATIC RAM-SOI

HX6356
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDDSB1 Static Supply Current
Typical Worst Case (2)
(1) Min Max
Units
0.2
1.5 mA
IDDSBMF Standby Supply Current - Deselected
0.2
1.5 mA
IDDOPW Dynamic Supply Current, Selected (Write)
3.4
4.0 mA
IDDOPR Dynamic Supply Current, Selected (Read)
2.8
4.0 mA
II
Input Leakage Current
-1 +1 µA
IOZ
Output Leakage Current
-1 +1 µA
VIL
Low-Level Input Voltage
CMOS 1.7
TTL
0.3xVDD V
0.8 V
Test Conditions
VIH=VDD, IO=0
VIL=VSS, f=0MHz
NCS=VDD, IO=0,
f=40 MHz
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
VSS≤VI≤VDD
VSS≤VIO≤VDD
Output=high Z
March Pattern
VDD = 4.5V
VIH
High-Level Input Voltage
VOL
Low-Level Output Voltage
VOH
High-Level Output Voltage
CMOS _3.2 0.7xVDD
TTL
2.2
0.3
0.4
0.005
0.1
4.3 4.2
4.5 VDD-0.1
V March Pattern
V VDD = 5.5V
V
VDD = 4.5V, IOL = 10 mA (CMOS)
= 8 mA (TTL)
V VDD = 4.5V, IOL = 200 µA
V VDD = 4.5V, IOH = -5 mA
V VDD = 4.5V, IOH = -200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
DUT
output
2.9 V
249Ω
+
Vref1 -
Vref2 +
-
Valid high
output
Valid low
output
CL >50 pF*
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
Tester Equivalent Load Circuit
5