HX6356 Datasheet, PDF (4/12 Pages) List of Unclassifed Manufacturers – 32K x 8 STATIC RAM-SOI

HX6356
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Rating
Min
Max
Units
VDD
Positive Supply Voltage (2)
-0.5
6.5
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°C
TSOLDER Soldering Temperature (5 Seconds)
270
°C
PD
Total Package Power Dissipation (3)
2.0
W
IOUT
DC or Average Output Current
25
mA
VPROT
ΘJC
ESD Input Protection Voltage (4)
Thermal Resistance (Jct-to-Case)
– 36 FP
2000
V
2
°C/W
TJ
Junction Temperature
175
°C
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
TA
VPIN
Parameter
Supply Voltage (referenced to VSS)
Ambient Temperature
Voltage on Any Pin (referenced to VSS)
Description
Min
Typ
Max
4.5
5.0
5.5
-55
25
125
-0.3
VDD+0.3
Units
V
°C
V
CAPACITANCE (1)
Symbol
Parameter
CI
Input Capacitance
CO
Output Capacitance
Typical
(1)
Worst Case
Min Max
7
9
Units
pF
pF
Test Conditions
VI=VDD or VSS, f=1 MHz
VIO=VDD or VSS, f=1 MHz
(1) This parameter is tested during initial design characterization only.
DATA RETENTION CHARACTERISTICS
Symbol
Parameter
Typical ^{Worst Case (2)} _Units
(1) _{Min Max}
VDR
Data Retention Voltage
2.5
V
IDR
Data Retention Current
500
µA
330
µA
(1) Typical operating conditions: TA= 25°C, pre-radiation.
(2) Worst case operating conditions: -55°C to +125°C, post total dose at 25°C.
Test Conditions
NCS=VDR
VI=VDR or VSS
NCS=VDD=2.5V, VI=VDD or VSS
NCS=VDD=3.0V, VI=VDD or VSS
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