NT256D64S8HA0G-6 Datasheet, PDF (5/13 Pages) List of Unclassifed Manufacturers – 184pin Two Bank Unbuffered DDR SDRAM MODULE

NT256D64S8HA0G-6
256MB : 32M x 64
PC2700 Unbuffered DIMM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V_IN, V_OUT
Voltage on I/O pins relative to Vss
-0.5 to VDDQ+0.5
V
V_IN
Voltage on Input relative to Vss
-0.5 to +3.6
V
V_DD
Voltage on VDD supply relative to Vss
-0.5 to +3.6
V
V_DDQ
Voltage on VDDQ supply relative to Vss
-0.5 to +3.6
V
T_A
Operating Temperature (Ambient)
0 to+70
°C
T_STG
Storage Temperature (Plastic)
-55 to +150
°C
P_D
Power Dissipation
16
W
I_OUT
Short Circuit Output Current
50
mA
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Capacitance
Parameter
Symbol
Max.
Units
Notes
Input Capacitance: CK0, CK0 , CK1, CK1 , CK2, CK2
CI1
24
pF
1
Input Capacitance: A0-A11, BA0, BA1, WE , RAS , CAS
CI2
60
pF
1
Input Capacitance: CKE0, CKE1, S0 , S1
CI3
30
pF
1
Input/Output Capacitance DQ0-63; DQS0-7, 9-16
CIO1
14
pF
1,2
1. VDDQ = VDD = 2.5V ± 0.2V, f = 100 MHz, T A = 25 °C, V OUT (DC) = VDDQ/2 , VOUT (Peak to Peak) = 0.2V.
2. DQS inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at
the board level.
Preliminary, 11/2001
5
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.