HBFP0405 Datasheet, PDF (4/10 Pages) List of Unclassifed Manufacturers – High Performance Isolated Collector Silicon Bipolar Transistor

4
HBFP-0405 Typical Scattering Parameters,
V_CE = 2 V, I_C = 5 mA, T_C = 25°C
Freq.
S₁₁
S₂₁
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.819 -6.2 22.0 12.630 174.5
0.5
0.775 -30.3 21.5 11.912 153.5
0.9
0.704 -52.4 20.6 10.664 134.9
1.0
0.681 -57.2 20.3 10.308 130.7
1.5
0.585 -81.5 18.8
8.689 111.9
1.8
0.531 -94.5 17.9
7.817 102.5
2.0
0.500 -102.7 17.3
7.306 96.7
2.5
0.440 -121.3 15.9
6.208 83.7
3.0
0.392 -138.9 14.6
5.362 72.4
3.5
0.360 -154.1 13.5
4.716 62.3
4.0
0.334 -168.9 12.5
4.214 52.9
4.5
0.315 177.0 11.6
3.814 44.3
5.0
0.302 162.5 10.9
3.491 35.7
5.5
0.295 148.1 10.2
3.229 27.4
6.0
0.301 133.7
9.6
3.010 19.0
6.5
0.311 120.4
9.0
2.827 10.8
7.0
0.327 105.9
8.5
2.668
2.6
7.5
0.346 94.0
8.0
2.520 -5.8
8.0
0.369 83.4
7.6
2.389 -13.8
8.5
0.392 74.1
7.1
2.261 -21.9
9.0
0.410 65.6
6.6
2.141 -29.9
9.5
0.428 56.9
6.2
2.038 -38.0
10.0
0.446 48.2
5.7
1.937 -46.0
dB
-50.2
-36.2
-31.5
-30.8
-28.1
-27.2
-26.6
-25.6
-24.8
-24.2
-23.6
-23.1
-22.5
-22.0
-21.5
-21.0
-20.5
-20.0
-19.5
-19.1
-18.7
-18.4
-18.1
S₁₂
Mag
0.003
0.016
0.027
0.029
0.039
0.044
0.047
0.053
0.057
0.061
0.066
0.070
0.075
0.079
0.084
0.089
0.095
0.101
0.106
0.110
0.116
0.120
0.124
Ang
87.8
77.1
67.3
64.9
54.0
49.0
46.0
39.9
34.6
30.4
26.5
23.0
19.0
15.1
11.1
6.4
2.1
-3.0
-7.7
-12.8
-18.0
-23.1
-28.5
S₂₂
Mag
Ang
0.990
0.959
0.897
0.875
0.783
0.733
0.703
0.641
0.597
0.566
0.541
0.528
0.513
0.499
0.484
0.463
0.439
0.414
0.389
0.370
0.357
0.345
0.334
-2.8
-13.4
-23.3
-25.5
-35.2
-40.1
-43.0
-49.4
-55.0
-59.7
-64.2
-68.6
-73.0
-77.0
-82.0
-86.1
-90.5
-95.4
-101.6
-108.5
-115.8
-122.3
-127.9
HBFP-0405 Noise Parameters: V_CE = 2 V, I_C = 5 mA
Freq.
F_min
Γ_opt
R_N/50
GHz
dB
Mag
Ang
Ω
0.9
1.36
0.386
2.8
17.0
1.0
1.38
0.375
5.0
16.8
1.5
1.46
0.333
17.7
16.2
1.8
1.52
0.305
25.5
15.6
2.0
1.55
0.292
31.9
15.3
2.5
1.65
0.246
50.0
13.8
3.0
1.73
0.208
59.9
13.1
3.5
1.79
0.187
73.6
12.6
4.0
1.93
0.153
85.6
12.0
4.5
1.99
0.123
100.2
11.8
5.0
2.08
0.104
119.5
11.3
5.5
2.18
0.065
141.5
12.0
6.0
2.32
0.051 -169.0
12.7
6.5
2.37
0.068 -129.9
13.5
7.0
2.48
0.101
-96.3
15.2
7.5
2.56
0.133
-82.9
17.0
8.0
2.69
0.177
-71.2
19.7
8.5
2.85
0.212
-62.8
22.8
9.0
2.99
0.246
-54.1
26.7
9.5
3.10
0.282
-46.1
30.9
10.0
3.12
0.314
-37.3
35.2
G_a
dB
25.59
24.76
21.56
20.12
19.29
17.61
16.04
14.81
13.76
12.90
12.12
11.45
10.87
10.32
9.82
9.33
8.92
8.50
8.10
7.77
7.41
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.