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| HBFP0405 Datasheet, PDF (1/10 Pages) List of Unclassifed Manufacturers – High Performance Isolated Collector Silicon Bipolar Transistor | |||
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High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0405
Features
⢠Ideal for High Gain, Low
Current Applications
⢠Typical Performance at
1.8 GHz
Associated Gain of 18 dB
and Noise Figure of 1.2 dB
at 2 V and 2 mA
P1dB of 5 dBm at 2 V and
5 mA
⢠Miniature 4-lead SC-70
(SOT-343) Plastic Package
⢠Transition Frequency
fT = 25 GHz
Surface Mount Plastic
Package/ SOT-343 (SC-70)
Outline 4T
Description
Hewlett Packardâs HBFP-0405 is a
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Pin Configuration
Base
Emitter
HBFP-0405 provides an associated
gain of 18 dB, noise figure of
1.2 dB, and P1dB of 5 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0405 is ideal for cellular/
PCS as well as for C-Band and
Ku-Band applications.
Applications
⢠LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
⢠Oscillator for TV Delivery
and TVRO Systems up to
12 GHz
Emitter
Collector
Note:
Package marking provides orientation
and identification.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
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