HBFP0405 Datasheet, PDF (3/10 Pages) List of Unclassifed Manufacturers – High Performance Isolated Collector Silicon Bipolar Transistor

3
HBFP-0405 Typical Scattering Parameters,
V_CE = 2 V, I_C = 2 mA, T_C = 25°C
Freq.
S₁₁
S₂₁
GHz
Mag
Ang
dB
Mag Ang
0.1
0.910 -4.2 16.5 6.665 176.2
0.5
0.889 -21.2 16.3 6.496 160.6
0.9
0.855 -37.6 15.7 6.101 146.0
1.0
0.841 -41.4 15.6 5.993 142.5
1.5
0.774 -60.9 14.8 5.484 125.9
1.8
0.730 -72.0 14.3 5.164 116.8
2.0
0.701 -79.4 13.9 4.964 110.9
2.5
0.634 -96.0 13.0 4.450 97.0
3.0
0.570 -112.3 12.0 3.996 84.7
3.5
0.521 -127.0 11.2 3.620 73.4
4.0
0.477 -141.2 10.4 3.320 62.9
4.5
0.443 -154.7
9.7
3.047 53.6
5.0
0.412 -168.7
9.0
2.829 44.2
5.5
0.386 177.1
8.5
2.646 34.9
6.0
0.372 162.2
7.9
2.493 25.6
6.5
0.369 147.7
7.5
2.371 16.8
7.0
0.366 130.7
7.1
2.258
8.1
7.5
0.370 116.2
6.6
2.141 -1.3
8.0
0.387 102.9
6.2
2.042 -9.8
8.5
0.405 91.4
5.7
1.937 -18.3
9.0
0.421 80.9
5.3
1.834 -26.6
9.5
0.437 70.5
4.9
1.753 -35.2
10.0
0.454 60.3
4.4
1.669 -43.7
dB
-49.6
-35.6
-30.4
-29.5
-26.4
-25.1
-24.5
-23.4
-22.7
-22.3
-21.9
-21.8
-21.5
-21.3
-21.0
-20.7
-20.4
-20.0
-19.8
-19.5
-19.3
-19.0
-18.8
S₁₂
Mag
0.003
0.017
0.030
0.033
0.048
0.055
0.059
0.068
0.073
0.077
0.080
0.082
0.084
0.087
0.089
0.093
0.096
0.100
0.103
0.105
0.109
0.112
0.115
Ang
88.5
80.5
71.9
69.6
57.5
50.6
46.4
37.0
28.7
21.7
15.6
10.7
6.0
1.6
-2.1
-7.0
-10.7
-14.7
-19.2
-23.6
-27.9
-32.4
-37.0
S₂₂
Mag
Ang
0.995
0.982
0.951
0.937
0.880
0.843
0.817
0.758
0.708
0.669
0.634
0.613
0.591
0.571
0.550
0.525
0.496
0.471
0.444
0.425
0.411
0.398
0.385
-2.2
-10.5
-18.8
-20.9
-30.8
-36.4
-39.8
-47.8
-54.9
-60.9
-66.4
-71.5
-76.4
-80.8
-86.1
-90.5
-95.2
-100.2
-106.7
-113.9
-121.3
-127.7
-133.5
HBFP-0405 Noise Parameters: V_CE = 2 V, I_C = 2 mA
Freq.
F_min
Γ_opt
R_N/50
GHz
dB
Mag
Ang
Ω
0.9
1.07
0.569
9.3
20.9
1.0
1.09
0.558
11.6
20.6
1.5
1.19
0.504
22.0
19.2
1.8
1.25
0.474
28.7
18.5
2.0
1.29
0.456
33.6
18.0
2.5
1.39
0.423
48.2
16.6
3.0
1.48
0.391
59.3
15.6
3.5
1.57
0.352
72.1
14.2
4.0
1.70
0.318
83.1
13.0
4.5
1.78
0.290
93.9
12.1
5.0
1.87
0.257
107.3
10.9
5.5
2.00
0.215
118.3
10.5
6.0
2.10
0.179
133.7
10.4
6.5
2.18
0.157
153.1
10.2
7.0
2.29
0.125
-179.2
11.0
7.5
2.35
0.116
-154.8
12.0
8.0
2.50
0.140
-123.4
13.7
8.5
2.65
0.163
-104.1
15.9
9.0
2.76
0.191
-89.2
18.6
9.5
2.93
0.226
-73.4
22.3
10.0
2.94
0.254
-61.4
26.3
G_a
dB
23.46
22.67
19.64
18.28
17.50
15.91
14.39
13.29
12.29
11.43
10.71
10.03
9.47
8.97
8.50
7.98
7.63
7.21
6.81
6.51
6.16
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.