HBFP0405 Datasheet, PDF (2/10 Pages) List of Unclassifed Manufacturers – High Performance Isolated Collector Silicon Bipolar Transistor

2
HBFP-0405 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation ^[2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum^[1]
1.5
15.0
4.5
12
54
150
-65 to 150
Thermal Resistance:
θ_jc = 550°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. P_T limited by maximum ratings.
Electrical Specifications, T_C = 25°C
Symbol
Parameters and Test Conditions
Units
DC Characteristics
BV_CEO Collector-Emitter Breakdown Voltage
I_C = 1 mA, open base V
I_CBO Collector-Cutoff Current
V_CB = 5 V, I_E = 0 nA
I_EBO Emitter-Base Cutoff Current
V_EB = 1.5 V, I_C = 0 µA
h_FE DC Current Gain
V_CE = 2 V, I_C = 2 mA —
RF Characteristics
F_MIN Minimum Noise Figure
I_C = 2 mA, V_CE = 2 V, f = 1.8 GHz dB
G_a
Associated Gain
|S₂₁|² Insertion Power Gain
I_C = 2 mA, V_CE = 2 V, f = 1.8 GHz dB
I_C = 5 mA, V_CE = 2 V, f = 1.8 GHz dB
P_-1dB Power Output @ 1 dB
Compression Point
I_C = 5 mA, V_CE = 2 V, f = 1.8 GHz dBm
Min.
4.5
50
16.5
Typ.
80
1.2
18
17
5
Max.
150
15
150
1.5