M12L128168A-2N Datasheet, PDF (5/46 Pages) Elite Semiconductor Memory Technology Inc. – JEDEC standard 3.3V power supply

ESMT
M12L128168A (2N)
Automotive Grade
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
I_CC1
I_CC2P
I_CC2PS
I_CC2N
I_CC2NS
I_CC3P
I_CC3PS
Burst Length = 1, t_RC ≥ t_RC(min), I_OL = 0 mA
CKE ≤ V_IL(max), t_CC = t_CC(min)
CKE & CLK ≤ V_IL (max), t_CC = ∞
CKE ≥ V_IH(min), CS ≥ V_IH(min), t_CC = t_CC(min)
Input signals are changed one time during 2t_CC
CKE ≥ V_IH(min), CLK ≤ V_IL(max), t_CC = ∞
input signals are stable
CKE ≤ V_IL(max), t_CC = t_CC(min)
CKE & CLK ≤ V_IL(max), t_CC = ∞
Active Standby Current
in non power-down mode
(One Bank Active)
I_CC3N
I_CC3NS
CKE ^≥ V_IH(min), ^{CS ≥} V_IH(min), t_CC=15ns
Input signals are changed one time during 2clks
All other pins ^≥ V_DD-0.2V or ^≤ 0.2V
CKE ≥ V_IH(min), CLK ≤ V_IL(max), t_CC = ∞
input signals are stable
Operating Current
(Burst Mode)
I_CC4
I_OL = 0 mA, Page Burst, 4 Banks activated
Refresh Current
Self Refresh Current
I_CC5
t_RFC ≥ t_RFC(min)
I_CC6
CKE ≤ 0.2V
Note: 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Version
-5 -6 -7
Unit Note
110 100 90 mA 1,2
2
mA
2
20
mA
10
5
mA
5
25
mA
15
mA
120 110 100 mA 1,2
210 200 190 mA
2
mA
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.1
5/46