M13S2561616A_09 Datasheet, PDF (48/49 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Revision History
Revision
0.1
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
M13S2561616A
Date
2006.04.28
2006.06.07
2007.05.09
2007.06.12
2007.07.13
2007.11.29
2007.12.19
2008.02.21
2008.03.12
2008.11.21
2009.04.20
2009.09.02
Description
Original
1. Delete Preliminary at ever page
2. Revise typing error of page1
Modify PD, DC specifications and MRS
Modify t_DQSS
Add -4 speed grade
Modify BGA package
Delete -4 speed grade
1. Modify 66-Lead TSOP(II) packing dimension
2. Add t_QHS spec
Add -4 speed grade
1. Move Revision History to the last
2. Add the specification of IDD7
3. Add a note of self refresh operation
1. Modify the specification of I_I
2. Add the specification of I_OH and I_OL for weak strength
driver
1. Modify the range of supply voltage for -4 speed grade
2. Modify the specification of IDD2N, IDD3N, IDD6, t_DQSCK,
t_DQSS, t_IS and t_IH for -4 speed grade
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2009
Revision : 2.0
48/49