M12L2561616A-2S Datasheet, PDF (4/44 Pages) Elite Semiconductor Memory Technology Inc. – JEDEC standard 3.3V power supply

ESMT
M12L2561616A (2S)
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
Parameter
Symbol
Test Condition
Operating Current
I_CC1
(One Bank Active)
Precharge Standby
Current in power-down
I_CC2P
mode
I_CC2PS
Burst Length = 2, t_RC = t_RC(min), I_OL = 0 mA
CKE = V_IL(max), t_CC = 10ns
CKE & CLK=V_IL(max), t_CC = ∞
Precharge Standby
Current in non
power-down mode
I_CC2N
I_CC2NS
Active Standby
I_CC3P
Current in power-down
mode
I_CC3PS
CKE=V_IH(min), CS = V_IH(min), t_CC = 10ns
Input signals are changed one time during 2CLK
CKE=V_IH(min), CLK=V_IL(max), t_CC = ∞
input signals are stable
CKE=V_IL(max), t_CC =10ns
CKE & CLK=V_IL(max), t_CC = ∞
Active Standby
Current in non
power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
I_CC3N
I_CC3NS
I_CC4
I_CC5
I_CC6
CKE ≥ V_IH(min), CS ≥ V_IH(min), t_CC = 15ns
Input signals are changed one time during 2 CLKs
All other pins ≥ V_DD-0.2V or ≤ 0.2V
CKE=V_IH(min), CLK=V_IL(max), t_CC = ∞
input signals are stable
I_OL = 0 mA, Page Burst, 4 Banks activated,
t_CCD = 2 CLKs
t_RFC ≥ t_RFC(min)
CKE=0.2V
Note: 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKs.
Version
-5
-6
-7
65
60
55
2
2
15
10
10
10
28
15
85
80
70
80
75
70
2
Unit Note
mA 1,2
mA
mA
mA
mA
mA
mA
mA
mA
mA 1,2
mA
mA
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2014
Revision: 1.2
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