M13S64164A-2Y Datasheet, PDF (3/49 Pages) Elite Semiconductor Memory Technology Inc. – Double-data-rate architecture, two data transfers per clock cycle

ESMT
PIN CONFIGURATION (TOP VIEW)
(TSOPII 66L, 400milX875mil Body, 0.65mm Pin Pitch)
M13S64164A (2Y)
Automotive Grade
BALL CONFIGURATION (TOP VIEW)
(BGA60, 8mmX13mmX1.2mm Body, 0.8mm Ball Pitch)
VDD
1
DQ0
2
VDDQ
3
DQ1
4
DQ2
5
VSSQ
6
DQ3
7
DQ4
8
VDDQ
9
DQ5
10
DQ6
11
VSSQ
12
DQ7
13
NC
14
VDDQ
15
LDQS
16
NC
17
VDD
18
NC
19
LDM
20
WE
21
CAS
22
RAS
23
CS
24
NC
25
BA0
26
BA1
27
A10/AP
28
A0
29
A1
30
A2
31
A3
32
VDD
33
66
VSS
65
DQ15
64
VSSQ
63
DQ14
62
DQ13
61
VDDQ
60
DQ12
59
DQ11
58
VSSQ
57
DQ10
56
DQ9
55
VDDQ
54
DQ8
53
NC
52
VSSQ
51
UDQS
50
NC
49
VREF
48
VSS
47
UDM
46
CLK
45
CLK
44
CKE
43
NC
42
NC
41
A11
40
A9
39
A8
38
A7
37
A6
36
A5
35
A4
34
VSS
1
2
3
A ^{VSSQ DQ15 VSS}
B ^{DQ14 VDDQ DQ13}
C DQ12 VSSQ DQ11
D DQ10 VDDQ DQ9
E DQ8 VSSQ UDQS
F VREF VSS _UDM
G
CLK CLK
H
NC CKE
J
A11 A9
K
A8
A7
L
A6
A5
M
A4
VSS
7
8
9
VDD DQ0 VDDQ
DQ2 VSSQ DQ1
DQ4 VDDQ DQ3
DQ6 VSSQ DQ5
LDQS VDDQ DQ7
LDM VDD NC
WE CAS
RAS ^CS
BA1 BA0
A0 A10/AP
A2
A1
VDD
A3
Pin Description
Pin Name
Function
Pin Name
Function
A0~A11,
BA0, BA1
Address inputs
- Row address A0~A11
- Column address A0~A7
A10/AP: AUTO Precharge
BA0, BA1: Bank selects (4 Banks)
DM is an input mask signal for write data.
LDM, UDM LDM corresponds to the data on DQ0~DQ7;
UDM correspond to the data on DQ8~DQ15.
DQ0~DQ15 Data-in/Data-out
CLK, CLK ^{Clock input}
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
V_SS
Ground
V_DD
LDQS, UDQS
Power
Bi-directional Data Strobe.
LDQS corresponds to the data on DQ0~DQ7;
UDQS correspond to the data on DQ8~DQ15.
CKE
CS
V_DDQ
V_SSQ
V_REF
NC
Clock enable
Chip select
Supply Voltage for DQ
Ground for DQ
Reference Voltage for SSTL_2
No connection
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2012
Revision : 1.0
3/49