M12L64164A_09 Datasheet, PDF (27/45 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M12L64164A
Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 3,Burst Length = 1
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 3.4
27/45