M12L64164A_0712 Datasheet, PDF (10/45 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
BURST SEQUENCE (BURST LENGTH = 4)
Initial Adrress
A1
A0
0
0
0
0
1
1
1
0
2
1
1
3
Sequential
1
2
2
3
3
0
0
1
M12L64164A
Operation Temperature Condition -40°C~85°C
Interleave
3
0
1
2
3
0
1
0
3
2
1
2
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial
A2
A1
A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Sequential
Interleave
0123456701234567
1234567010325476
2345670123016745
3456701232107654
4567012345670123
5670123454761032
6701234567452301
7012345676543210
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2007
Revision: 1.2
10/45