EN29GL064 Datasheet, PDF (59/66 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory

Preliminary EN29GL064
TABLE 23. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
Byte
Word
Erase/Program Endurance
Typ
0.1
16
8
8
67.2
33.6
100K
Limits
Max
2
140
200
200
201.6
100.8
Comments
Unit
sec
Excludes 00h programming prior
to erasure
sec
µs
µs
Excludes system level overhead
sec
cycles
Minimum 100K cycles
Notes:
1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard
pattern programmed.
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90 C and 100,000 cycles.
¢
Table 24. 48 and 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C_IN
Input Capacitance
V_IN = 0
6
7.5
pF
C_OUT
Output Capacitance
V_OUT = 0
8.5
12
pF
C_IN2
Control Pin Capacitance
V_IN = 0
7.5
9
pF
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
Table 25. DATA RETENTION
Parameter Description
Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
This Data Sheet may be revised by subsequent versions
59
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/3/20
www.eonssi.com