EN29GL064 Datasheet, PDF (44/66 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory

Preliminary EN29GL064
Table 14-1. EN29GL064 Command Definitions
Command
Sequence
Read
Reset
Manufacturer
ID
Device ID
Uniform
Word
Byte
Word
Byte
Bus Cycles
1^st
P
P
Cycle
Addr Data
2 ^nd
P
P
Cycle
Addr Data
3 ^rd
P
P
Cycle
Addr Data
4 ^th
P
P
Cycle
Addr Data
1 RA RD
5 ^th
P
P
Cycle
Addr Data
6 ^th
P
P
Cycle
Addr Data
1 XXX F0
555
4
AAA
AA
2AA
555
55
555
AAA
90
000
100
000
200
7F
1C
7F
1C
4 ⁵⁵⁵ AA ^2AA 55 ⁵⁵⁵ 90 ^{X01 227E X0E 220C X0F 2201}
AAA
555
AAA
X02 7E X1C 0C X1E 01
Device ID
Top Boot
Word ₄ 555 _AA 2AA ₅₅ 555 ₉₀ X01 227E X0E 2210 X0F 2201
Byte
AAA
555
AAA
X02 7E X1C 10 X1E 01
Device ID
Bottom Boot
Word
555
2AA
555
X01 227E X0E 2210 X0F 2200
4
AA
55
90
Byte
AAA
555
AAA
X02 7E X1C 10 X1E 00
Sector Protect
Verify
Word
Byte
4
555
AAA
AA
2AA
555
55
555
AAA
(SA)
90
X02
(SA)
X04
00
01
00
01
Program
Word
555
2AA
555
4
AA
55
A0 PA PD
Byte
AAA
555
AAA
Write to Buffer
6 555 AA 2AA 55 SA 25 SA WC PA PD WBL PD
Program Buffer to Flash
1 SA 29
Write to Buffer Abort Reset 3 555 AA 2AA 55 555 F0
Chip Erase
Sector Erase
Word
555
2AA
555
555
2AA
555
6
AA
55
80
AA
55
10
Byte
AAA
555
AAA
AAA
555
AAA
Word
Byte
6
555
AAA
AA
2AA
555
55
555
AAA
80
555
AAA
AA
2AA
555
55
SA
30
Sector Erase Suspend
1 XXX B0
Sector Erase Resume
1 XXX 30
CFI Query
Word ₁
Byte
55 ₉₈
AA
Accelerated Program
2 XX A0 PA PD
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge
of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits Amax–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write
buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
This Data Sheet may be revised by subsequent versions
44
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/3/20
www.eonssi.com