EN29GL064 Datasheet, PDF (46/66 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory

Preliminary EN29GL064
Table 15. DC Characteristics
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
I_LI
I_LIT
I_LO
I_CC1
I_CC2
I_CC3
I_CC4
I_CC5
I_CC6
V_IL
V_IH
V_HH
V_ID
V_OL
V_OH
V_LKO
Parameter
Input Leakage Current
A9, OE#, RESET#
Input Load Current
Output Leakage Current
VCC Active Read Current
VCC Intra-Page Read
Current
VCC Active Erase/
Program Current
VCC Standby Current
VCC Reset Current
Automatic Sleep Mode
Input Low Voltage
Input High Voltage
Acceleration Program
Voltage
Voltage for Autoselect or
Temporary Sector
Unprotect
Output Low Voltage
Output High Voltage
CMOS
Supply voltage (Erase and
Program lock-out)
Test Conditions
0V≤ VIN ≤ Vcc
VCC = VCC max; VID= 11.5 V
0V≤ VOUT ≤ Vcc
CE# = VIL; OE# = VIH ;
VCC = VCC max
5MHz
10MHz
CE# = VIL , OE# = VIH , VCC =
VCCmax, f = 10 MHz
CE# = VIL , OE# = VIH , VCC =
VCCmax, f = 33 MHz
CE# = VIL , OE# = VIH , VCC = VCCmax
CE#, RESET# = VCC ± 0.3 V,
OE# = VIH , VCC = VCC max
VIL = Vss + 0.3 V/-0.1V,
RESET# = Vss ± 0.3V
VIH = Vcc ± 0.3V
VIL = Vss ± 0.3V
IOL = 100 ^¡ A
IOH = -100 ^¡ A
Min Typ Max Unit
±5
µA
35
µA
±1
µA
20 30
mA
30 45
mA
1
10
mA
5
15
20 30
mA
1
5.0 µA
1
5.0 µA
1
5.0
µA
-0.5
0.7 x
VIO
0.3 x
VIO
V
VIO +
0.3
V
10.5
11.5
V
10.5
0.85 x
VIO
2.3
11.5
V
0.15 x
VIO
V
V
2.5
V
Notes:
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not
at full CMOS supply voltages.
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Not 100% tested.
This Data Sheet may be revised by subsequent versions
46
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/3/20
www.eonssi.com