EN29GL064ATB Datasheet, PDF (52/58 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

EN29GL064AT/B
TABLE 22. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
Byte
Word
Total Write Buffer time
ACC Total Write Buffer time
Erase/Program Endurance
Typ
0.1
16
8
8
67.2
33.6
100
60
100K
Limits
Max
2
60
200
200
201.6
100.8
Comments
Unit
sec
Excludes 00h programming prior
to erasure
sec
µs
µs
sec
Excludes system level overhead
µs
cycles
Minimum 100K cycles
Notes:
1. Typical program and erase times assume the following conditions: room temperature, 3V and check board
pattern programmed.
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles.
Table 23. 48-PIN TSOP AND BGA PACKAGE CAPACITANCE
Parameter Symbol Parameter Description Test Setup Package Typ
TSOP
6
C_IN B
B
Input Capacitance
V_IN B
B
=
0
BGA
1.2
C_OUT B
B
Output Capacitance
TSOP
8.5
V_OUT B
B
=
0
BGA
1.1
C_IN2 B
B
Control Pin Capacitance
V_IN B
B
=
0
TSOP
7.5
BGA
1.0
Max
7.5
1.2
12
1.2
9
1.3
Unit
pF
pF
pF
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
Table 24. DATA RETENTION
Parameter Description
Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
This Data Sheet may be revised by subsequent versions
52
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/12/01
www.eonssi.com