EN29GL064ATB Datasheet, PDF (46/58 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

AC CHARACTERISTICS
EN29GL064AT/B
Table 20. Write (Erase/Program) Operations
Parameter
Symbols
JEDEC Standard
Description
Speed
Unit
-70
t_AVAV
t_WC
Write Cycle Time
Min
70
ns
t_AVWL
t_AS
Address Setup Time
Min
0
ns
t_WLAX
t_AH
Address Hold Time
Min
45
ns
t_DVWH
t_DS
Data Setup Time
Min
30
ns
t_WHDX
t_DH
Data Hold Time
Min
0
ns
t_OEH
Output Enable
Hold Time
Read
Toggle and
DATA# Polling
MIn
Min
0
10
ns
ns
t_GHWL
t_GHWL
Read Recovery Time before
Write (OE# High to WE# Low)
Min
0
ns
t_ELWL
t_CS
CE# SetupTime
Min
0
ns
t_WHEH
t_CH
CE# Hold Time
Min
0
ns
t_WLWH
t_WP
Write Pulse Width
Min
35
ns
t_WHDL
t_WPH Write Pulse Width High
Min
20
ns
Write Buffer Program Operation
(Note 2, 3)
Typ
100
µs
t_WHWH1 t_{WHWH1 Programming Operation}
Typ
8
µs
(Word AND Byte Mode)
Max
200
µs
Typ
0.1
s
Sector Erase Operation
t_WHWH2 t_WHWH2
Max
2
s
Chip Erase Operation
Typ
16
s
t_VHH
V_HH Rise and Fall Time
Min
250
ns
t_VCS
Vcc Setup Time
Min
50
µs
tB_BUSY WE# High to RY/BY# Low
Max
70
ns
t_RB
Recovery Time from RY/BY#
Min
0
ns
Notes: 1. Not 100% tested.
2. See table.22 Erase and Programming Performance for more information.
3. For 1~16 words bytes programmed.
This Data Sheet may be revised by subsequent versions
46
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/12/01
www.eonssi.com