EN29GL064ATB Datasheet, PDF (34/58 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

EN29GL064AT/B
COMMON FLASH INTERFACE (CFI)
The common flash interface (CFI) specification outlines device and host systems software
interrogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-
independent, and forward- and backward-compatible for the specified flash device families. Flash
vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h in word mode (or address AAh in byte mode), any time the device is ready to read
array data.
The system can read CFI information at the addresses given in Tables 9~11.In word mode, the
upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must
write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The
device enters the CFI query mode and the system can read CFI data at the addresses given in
Tables 9~11. The system must write the reset command to return the device to the autoselect mode.
Table 9. CFI Query Identification String
Addresses
(Word Mode) Data
Description
10h
0051h
11h
0052h Query Unique ASCII string “QRY”
12h
0059h
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 10. System Interface String
Addresses
(Word Mode) Data
Description
1Bh
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Ch
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Dh
0000h Vpp Min voltage (00h = no Vpp pin present)
1Eh
0000h Vpp Max voltage (00h = no Vpp pin present)
1Fh
0003h Typical timeout per single byte/word write 2^N µs
20h
0004h Typical timeout for min size buffer write 2^N µs (00h = not supported)
21h
0009h Typical timeout per individual block erase 2^N ms
22h
0000h Typical timeout for full chip erase 2^N ms (00h = not supported)
23h
0005h Max timeout for byte/word write 2^N times typical
24h
0005h Max timeout for buffer write 2^N times typical
25h
0004h Max timeout per individual block erase 2^N times typical
26h
0000h Max timeout for full chip erase 2^N times typical (00h = not supported)
This Data Sheet may be revised by subsequent versions
34
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/12/01
www.eonssi.com