EN29GL064ATB Datasheet, PDF (41/58 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

AC CHARACTERISTICS
EN29GL064AT/B
Table 17. Read-only Operations Characteristics
Parameter
Symbols
Description
Test Setup
JEDEC Standard
Speed
Unit
-70
t_AVAV
t_RC
Read Cycle Time
Min
70
ns
t_AVQV t_ACC
Address to Output Delay
CE# = V_IL
OE#= V_IL
Max
70
ns
t_ELQV
t_CE
Chip Enable To Output Delay
OE#= V_IL Max
70
ns
t_PACC
Page Access Time
Max
25
ns
t_GLQV t_OE
Output Enable to Output Delay
Max
25
ns
t_EHQZ t_DF
Chip Enable to Output High Z
Max
20
ns
t_GHQZ t_DF
t_AXQX t_OH
Output Enable to Output High Z
Output Hold Time from
Addresses, CE# or OE#,
whichever occurs first
t_OEH
Output Enable
Hold Time
Notes: High Z is Not 100% tested.
Read
Toggle and
DATA# Polling
Max
20
ns
Min
0
ns
Min
0
ns
Min
10
ns
Figure 12. AC Waveforms for READ Operations
Addresses
CE#
OE#
WE#
Outputs
RESET#
t_RC
Addresses Stable
t_ACC
tB_OEB
t_DF
t_OEH
t_CE
HIGH Z
t_OH
Output Valid
HIGH Z
RY/BY# 0V
This Data Sheet may be revised by subsequent versions
41
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/12/01
www.eonssi.com