EN25S16 Datasheet, PDF (41/58 Pages) Eon Silicon Solution Inc. – 16 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S16
Figure 28. Chip Erase Instruction Sequence Diagram
Figure 28.1 Chip Erase Sequence under EQPI Mode
Deep Power-down (DP) (B9h)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest con-
sumption mode (the Deep Power-down mode). It can also be used as an extra software protection
mechanism, while the device is not in active use, since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (CS#) High deselects the device, and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep
Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce
the standby current (from I_CC1 to I_CC2, as specified in Table 13.)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. This releases the device from
this mode. The Release from Deep Power-down and Read Device ID (RDI) instruction also allows the
This Data Sheet may be revised by subsequent versions
41
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2011/12/16
www.eonssi.com