EN25S16 Datasheet, PDF (1/58 Pages) Eon Silicon Solution Inc. – 16 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S16
EN25S16
16 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 1.65-1.95 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 16 M-bit Serial Flash
- 16 M-bit / 2048 KByte /8192 pages
- 256 bytes per programmable page
• Standard, Dual or Quad SPI
- Standard SPI: CLK, CS#, DI, DO, WP#
- Dual SPI: CLK, CS#, DQ₀, DQ₁, WP#
- Quad SPI: CLK, CS#, DQ₀, DQ₁, DQ₂, DQ₃
• High performance
- 104MHz clock rate for one data bit
- 80MHz clock rate for two data bits
- 80MHz clock rate for four data bits
• Burst Modes
- Continuous linear burst
- 8/16/32/64/128/256 linear burst with wrap-
around
• Low power consumption
- 12 mA typical active current
- 1μA typical power down current
• Uniform Sector Architecture:
- 512 sectors of 4-Kbyte
- 64 blocks of 32-Kbyte
- 32 blocks of 64-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 0.7ms typical
- Sector erase time: 40ms typical
- 32KB Block erase time 150ms typical
- 64KB Block erase time 300ms typical
- Chip erase time: 9 seconds typical
• Write Suspend and Write Resume
• Lockable 512 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 pins VSOP 200mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25S16 is a 16 Megabit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25S16 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual, Quad I/O using SPI pins: Serial Clock, Chip Select, Serial
DQ₀ (DI) and DQ₁(DO), DQ₂(WP#) and DQ₃(NC). SPI clock frequencies of up to 80MHz are supported
allowing equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output when using
the Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256 bytes at a
time, using the Page Program instruction.
The EN25S16 also offers a sophisticated method for protecting individual blocks against erroneous or
malicious program and erase operations. By providing the ability to individually protect and unprotect
blocks, a system can unprotect a specific block to modify its contents while keeping the remaining
blocks of the memory array securely protected. This is useful in applications where program code is
patched or updated on a subroutine or module basis or in applications where data storage segments
need to be modified without running the risk of errant modifications to the program code segments.
The EN25S16 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25S16 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2011/12/16
www.eonssi.com