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EN25Q40_11 Datasheet, PDF (40/49 Pages) Eon Silicon Solution Inc. – 4 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
EN25Q40
Table 11. AC Characteristics
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol Alt
Parameter
Min Typ
Max
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
D.C.
100
FR
fC
WRDI, WRSR
Serial Clock Frequency for:
Dual Output Fast Read and Quad I/O Fast Read
D.C.
80
fR
Serial Clock Frequency for READ, RDSR, RDID D.C.
50
tCH 1
Serial Clock High Time
4
tCL1
Serial Clock Low Time
4
tCLCH2
Serial Clock Rise Time (Slew Rate)
0.1
tCHCL 2
Serial Clock Fall Time (Slew Rate)
0.1
tSLCH
tCSS CS# Active Setup Time
5
tCHSH
CS# Active Hold Time
5
tSHCH
CS# Not Active Setup Time
5
tCHSL
CS# Not Active Hold Time
5
tSHSL
tCSH CS# High Time
100
tSHQZ 2
tDIS Output Disable Time
6
tCLQX
tHO Output Hold Time
0
tDVCH
tDSU Data In Setup Time
2
tCHDX
tDH Data In Hold Time
5
tCLQV
tV
Output Valid from CLK
8
tWHSL3
tSHWL3
Write Protect Setup Time before CS# Low
20
Write Protect Hold Time after CS# High
100
tDP 2
CS# High to Deep Power-down Mode
3
tRES1 2
CS# High to Standby Mode without Electronic
Signature read
3
tRES2 2
CS# High to Standby Mode with Electronic
Signature read
1.8
tW
Write Status Register Cycle Time
10
15
tPP
Page Programming Time
1.3
5
tSE
Sector Erase Time
0.09
0.3
tBE
Block Erase Time
0.5
2
tCE
Chip Erase Time
3.5
10
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
Unit
MHz
MHz
MHz
ns
ns
V / ns
V / ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ms
ms
s
s
s
This Data Sheet may be revised by subsequent versions
40
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. F, Issue Date: 2011/11/02
www.eonssi.com