EN25Q40_11 Datasheet, PDF (27/49 Pages) Eon Silicon Solution Inc. – 4 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

EN25Q40
Figure 16.1 Program Instruction Sequence under EQIO Mode
Sector Erase (SE) (20h)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see
Table 2) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 17. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose du-
ration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3) is not executed.
The instruction sequence is shown in Figure 18.1 while using the Enable Quad I/O (EQIO) (38h) command.
This Data Sheet may be revised by subsequent versions
27
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. F, Issue Date: 2011/11/02
www.eonssi.com