EN25Q40_11 Datasheet, PDF (38/49 Pages) Eon Silicon Solution Inc. – 4 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Power-up Timing
EN25Q40
Figure 26. Power-up Timing
Table 8. Power-Up Timing and Write Inhibit Threshold
Symbol
tVSL(1)
tPUW(1)
VWI(1)
Parameter
VCC(min) to CS# low
Time delay to Write instruction
Write Inhibit Voltage
Note:
1.The parameters are characterized only.
2. VCC (max.) is 3.6V and VCC (min.) is 2.7V
Min.
10
1
1
Max. Unit
µs
10
ms
2.5
V
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).
The Status Register contains 00h (all Status Register bits are 0).
This Data Sheet may be revised by subsequent versions
38
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. F, Issue Date: 2011/11/02
www.eonssi.com