English
Language : 

EN25F20 Datasheet, PDF (4/31 Pages) Eon Silicon Solution Inc. – 2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector
EN25F20
MEMORY ORGANIZATION
The memory is organized as:
z 262,144 bytes
z Uniform Sector Architecture
4 blocks of 64-Kbyte
64 sectors of 4-Kbyte
z 1024 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Block
3
2
1
0
Sector
63
48
47
32
31
16
15
4
3
2
1
0
Address range
03F000h
03FFFFh
030000h
02F000h
030FFFh
02FFFFh
020000h
01F000h
020FFFh
01FFFFh
010000h
00F000h
010FFFh
00FFFFh
004000h
003000h
002000h
001000h
000000h
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh
OPERATING FEATURES
SPI Modes
The EN25F20 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK),
Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation Modes 0
(0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as shown in Figure
3, concerns the normal state of the SCK signal when the SPI bus master is in standby and data is not
being transferred to the Serial Flash. For Mode 0 the SCK signal is normally low. For Mode 3 the SCK
signal is normally high. In either case data input on the DI pin is sampled on the rising edge of the SCK.
Data output on the DO pin is clocked out on the falling edge of SCK.
This Data Sheet may be revised by subsequent versions
4
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/15