EN25F20 Datasheet, PDF (14/31 Pages) Eon Silicon Solution Inc. – 2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector

EN25F20
Sector Erase (SE) (20h)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see Table 2) is a
valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 12.. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration
is t_SE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP1, BP0) bits
(see Table 3) is not executed.
This Data Sheet may be revised by subsequent versions ₁₄ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/15