EN25F20 Datasheet, PDF (22/31 Pages) Eon Silicon Solution Inc. – 2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector

Table 8. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
EN25F20
Symbol
Parameter
I_LI
I_LO
I_CC1
I_CC2
Input Leakage Current
Output Leakage Current
Standby Current
Deep Power-down Current
I_CC3
Operating Current (READ)
I_CC4
I_CC5
I_CC6
I_CC7
V_IL
V_IH
V_OL
V_OH
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Test Conditions
CS# = V_CC, V_IN = V_SS or V_CC
CS# = V_CC, VIN = V_SS or V_CC
CLK = 0.1 V_CC / 0.9 V_CC at
100MHz, Q = open
CLK = 0.1 V_CC / 0.9 V_CC at
75MHz, Q = open
CS# = V_CC
CS# = V_CC
CS# = V_CC
CS# = V_CC
I_OL = 1.6 mA
I_OH = –100 µA
Min.
Max. Unit
±2
µA
±2
µA
5
µA
5
µA
25
mA
20
mA
15
mA
15
mA
15
mA
15
mA
– 0.5
0.2 V_{CC V}
0.7V_CC V_CC+0.4 _V
0.4
V
V_CC-0.2
V
Table 9. AC Measurement Conditions
Symbol
Parameter
Min.
Max.
Unit
C_L
Load Capacitance
20/30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0.2V_CC to 0.8V_CC
V
Input Timing Reference Voltages
0.3V_CC to 0.7V_CC
V
Output Timing Reference Voltages
V_CC / 2
V
Notes:
1. C_L = 20 pF when CLK=100MHz, C_L = 30 pF when CLK=75MHz,
Figure 22. AC Measurement I/O Waveform
This Data Sheet may be revised by subsequent versions ₂₂ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/15