EN29LV160B_11 Datasheet, PDF (33/43 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Table 15. ERASE AND PROGRAMMING PERFORMANCE
EN29LV160B
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
Byte
Word
Erase/Program Endurance
Typ
0.1
4
8
8
16.8
8.4
100K
Limits
Max
2
35
200
200
50.4
25.2
Comments
Unit
sec
Excludes 00h programming prior
to erasure
sec
µs
µs
Excludes system level overhead
sec
cycles
Minimum 100K cycles
Notes: Maximum program and erase time assume the following conditions V_cc = 2.7 V , 85°C
Table 16. 48-PIN TSOP AND BGA PACKAGE CAPACITANCE
Parameter Symbol Parameter Description Test Setup Package Typ
TSOP
6
C_IN B
B
Input Capacitance
V_IN B
B
=
0
BGA
1.2
C_OUT B
B
Output Capacitance
TSOP
8.5
V_OUT B
B
=
0
BGA
1.1
C_IN2 B
B
Control Pin Capacitance
V_IN B
B
=
0
TSOP
7.5
BGA
1.0
Max
7.5
1.2
12
1.2
9
1.3
Unit
pF
pF
pF
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
Table 17. DATA RETENTION
Parameter Description
Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
This Data Sheet may be revised by subsequent versions
33
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2011/10/26
www.eonssi.com