EN29LV160B_11 Datasheet, PDF (17/43 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV160B
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command are
ignored. Another Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7
DATA# Polling
The EN29LV160B provides DATA# polling on DQ7 to indicate the status of the embedded operations.
The DATA# polling feature is active during Byte Programming, Sector Erase, Chip Erase, and Erase
Suspend. (See Table 10)
When the embedded Programming is in progress, an attempt to read the device will produce the
complement of the data written to DQ7. Upon the completion of the Byte Programming, an attempt to
read the device will produce the true data written to DQ7. For the Byte Programming, DATA# polling is
valid after the rising edge of the fourth WE# or CE# pulse in the four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the DQ7
output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7 output
during the read cycles. For Chip Erase, the DATA# polling is valid after the rising edge of the sixth WE#
or CE# pulse in the six-cycle sequence. DATA# polling is valid after the last rising edge of the WE# or
CE# pulse for chip erase or sector erase.
DATA# Polling must be performed at any address within a sector that is being programmed or erased
and not a protected sector. Otherwise, DATA# polling may give an inaccurate result if the address used
is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when the
output enable (OE#) is low. This means that the device is driving status information on DQ7 at one
instant of time and valid data at the next instant of time. Depending on when the system samples the
DQ7 output, it may read the status of valid data. Even if the device has completed the embedded
operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid. The valid data
on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for DATA# Polling (DQ7) is shown on Flowchart 5. The DATA# Polling (DQ7) timing
diagram is shown in Figure 8.
RY/BY#: Ready/Busy
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in
progress or completed. The RY/BY# status is valid after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together
in parallel with a pull-up resistor to Vcc.
In the output-low period, signifying Busy, the device is actively erasing or programming. This includes
programming in the Erase Suspend mode. If the output is high, signifying the Ready, the device is
ready to read array data (including during the Erase Suspend mode), or is in the standby mode.
This Data Sheet may be revised by subsequent versions
17
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2011/10/26
www.eonssi.com