EN29LV160B_11 Datasheet, PDF (32/43 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Table 14. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
JEDEC Standard
Description
t_AVAV
t_WC
Write Cycle Time (Note 1)
Min
t_AVEL
t_AS
Address Setup Time
Min
t_ELAX
t_AH
Address Hold Time
Min
t_DVEH
t_DS
Data Setup Time
Min
t_EHDX
t_DH
Data Hold Time
Min
t_OES
Output Enable Setup Time
Min
t_OEH
Output Enable
Read
Hold Time
Toggle and Data Polling
Min
Min
t_GHEL
t_GHEL
Read Recovery Time before Write
(OE# High to CE# Low)
Min
t_WLEL
t_WS
WE# SetupTime
Min
t_EHWH
t_WH
WE# Hold Time
Min
t_ELEH
t_CP
Write Pulse Width
Min
t_EHEL
t_CPH
Write Pulse Width High
Min
t_WHWH1
t_WHWH1
Programming Operation
(Byte AND word mode) (Note 2)
Typ
Max
t_WHWH2
t_WHWH2
Erase Operation
(Note 2)
Sector
Typ
Chip
Typ
t_VCS
Vcc Setup Time
Min
t_RB
Recovery Time from RY/BY#
Min
1. Not 100% tested.
2. See Erase and Programming Performance for more information.
EN29LV160B
Speed
Unit
-70
70
ns
0
ns
45
ns
30
ns
0
ns
0
ns
0
ns
10
ns
0
ns
0
ns
0
ns
35
ns
20
ns
8
µs
200
µs
0.1
s
4
s
50
µs
0
ns
This Data Sheet may be revised by subsequent versions
32
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2011/10/26
www.eonssi.com