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| EN29LV160A Datasheet, PDF (33/43 Pages) Eon Silicon Solution Inc. – 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY | |||
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AC CHARACTERISTICS
EN29LV160A
Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings
Addresses
CE#
OE#
WE#
Data
RY/BY#
Erase Command Sequence (last 2 cycles)
tWC
tAS
tAH
0x2AA
SA
0x555 for chip
erase
tGHWL
tCH
tWP
tCS
tWPH
0x55
tDS
tDH
0x30
tBUSY
VCC
tVCS
Read Status Data (last two cycles)
VA
VA
tWHWH2 or tWHWH3
Status
DOUT
tRB
Notes:
1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions 33 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
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