EN29LV160A Datasheet, PDF (31/43 Pages) Eon Silicon Solution Inc. – 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

Table 14. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
JEDEC Standard
Description
t_AVAV
t_WC
Write Cycle Time
Min
t_AVEL
t_AS
Address Setup Time
Min
t_ELAX
t_AH
Address Hold Time
Min
t_DVEH
t_DS
Data Setup Time
Min
t_EHDX
t_DH
Data Hold Time
Min
t_OES
Output Enable Setup Time
Min
t_OEH ^{Output Enable}
Read
0
Hold Time
Toggle and
Data Polling
10
t_GHEL
t_GHEL
Read Recovery Time before
Write (OE# High to CE# Low)
Min
t_WLEL
t_WS
WE# SetupTime
Min
t_EHWH
t_WH
WE# Hold Time
Min
t_ELEH
t_CP
Write Pulse Width
Min
t_EHEL
t_CPH
Write Pulse Width High
Min
t_WHWH1 t_WHWH1
Programming Operation
(Byte AND word mode)
Typ
Max
Typ
t_WHWH2 t_WHWH2
Sector Erase Operation
Max
Typ
t_WHWH3 t_WHWH3
Chip Erase Operation
Max
t_VCS
Vcc Setup Time
Min
t_VIDR
Rise Time to V_ID
Min
EN29LV160A
Speed Options
-70
-90
70
90
0
0
45
45
30
45
0
0
0
0
0
0
10
10
0
0
0
0
0
0
35
45
20
20
8
8
300
300
0.5
0.5
10
10
17.5
17.5
50
50
500
500
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
s
s
s
µs
ns
This Data Sheet may be revised by subsequent versions ₃₁ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07