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EN29LV160B Datasheet, PDF (30/43 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Table 12. AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter
Symbols
JEDEC Standard
Description
tAVAV
tRC
Read Cycle Time
tAVQV tACC
Address to Output Delay
tELQV
tCE
Chip Enable To Output Delay
Test Setup
CE# = VIL
OE#= VIL
OE#= VIL
Min
Max
Max
tGLQV tOE
Output Enable to Output Delay
Max
tEHQZ tDF
Chip Enable to Output High Z
Max
tGHQZ tDF
Output Enable to Output High Z
Max
Output Hold Time from
tAXQX tOH
Addresses, CE# or OE#,
Min
whichever occurs first
tOEH
Output Enable
Hold Time
Read
Toggle and
DATA# Polling
MIn
Min
Notes:
1. High Z is Not 100% tested.
2. For - 70
Vcc = 2.7V – 3.6V
Output Load : 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to 3.0 V
Timing Measurement Reference Level, Input and Output: 1.5 V
Figure 3. AC Waveforms for READ Operations
Addresses
CE#
OE#
tBRCB
Addresses Stable
tBACC
tBOEB
tBDF
WE#
Outputs
RESET#
tBOEHB
tBCEB
HIGH Z
tBOH
Output Valid
EN29LV160B
Speed
Unit
-70
70
ns
70
ns
70
ns
30
ns
20
ns
20
ns
0
ns
0
ns
10
ns
HIGH Z
RY/BY#
0V
This Data Sheet may be revised by subsequent versions
30
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2011/10/26
www.eonssi.com