EN29LV160B Datasheet, PDF (26/43 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory

Table 11. DC Characteristics
(T_a = - 40°C to 85°C; V_CC = 2.7-3.6V)
Symbol
Parameter
I_LI
I_LO
I_CC1
Input Leakage Current
Output Leakage Current
Active Read Current ( Byte mode)
Active Read Current ( Word mode)
I_CC2
Supply Current (Standby-
CMOS)
I_CC3
V_IL
V_IH
V_OL
Supply Current (Program or Erase)
Input Low Voltage
Input High Voltage
Output Low Voltage
Test Conditions
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL ; OE# = V_{IH ;}
f = 5MHZ
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Byte program, Sector or
Chip Erase in progress
I_OL = 4.0 mA
V_OH
Output High Voltage CMOS
I_OH = -100μA
V_ID
I_ID
V_LKO
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
A9 = V_ID
Min
-0.5
0.7 x
Vcc
Vcc -
0.4V
10.5
2.3
EN29LV160B
Typ ^{Max Unit}
±5
µA
±5
µA
9
16
mA
9
16
mA
1
5.0
µA
20
30
mA
0.8
V
Vcc +
0.3
V
0.45
V
V
11.5
V
100
µA
2.5
V
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they
draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions
26
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2011/10/26
www.eonssi.com