EN25P80 Datasheet, PDF (30/30 Pages) Eon Silicon Solution Inc. – 8 Mbit Uniform Sector, Serial Flash Memory

Revisions List
EN25P80
Revision No Description
Date
A
Initial release
2006/04/26
B
1. _{Change clock rate from 50MHz to 75MHz in page 1}
2006/08/29
2. Add INSTRUCTIONS description in page 8
3. Change Table 8 DC Characteristics in page 21
(1) Add ICC3 for 75MHz
(2) Change ICC1, ICC2 from 10µA to 20µA
4. Change Table 10 to 75MHz AC Characteristics in page 22
(1) Change F_R from 50 to 75MHz
(2) Change f_R from 33 to 50MHz
(3) Change t_CLH from 9ns to 6ns
(4) Change t_CLL from 9ns to 6ns
(5) Change t_SHQZ from 9ns to 6ns
(6) Change t_HLQZ from 9ns to 6ns
(7) Change t_HHQZ from 9ns to 6ns
(8) Change t_CLQV from 9ns to 6ns
(9) Restore CS# Active Setup Time from 2ns to 5ns
(10)Change Data In Setup Time from 5ns to 2ns
5. Add Table 11: 50MHz AC Characteristics in page 23
6. Add 75MHz option in Ordering Information, page 29
C
1. Change Page program time 1.4 ms typical to 1.5 ms typical ^2006/12/25
Sector erase time 300 ms typical to 800 ms typical
Chip erase time 4.8 seconds to 10 seconds typical
in page 1
2. Change Table 10: 75MHz AC Characteristics in page 22
(1) Change Page program time 1.4 ms typical to 1.5 ms
(2) Change Sector erase time 0.3 / 0.6 seconds to
0.8 / 2 seconds for typical and maximum
(3) Change Chip erase time 4.8 / 9.6 seconds to 10 / 20
seconds for typical and maximum
3. Change Table 11: 50MHz AC Characteristics in page 23
(1) Change Page program time 1.4 ms typical to 1.5 ms
(2) Change Sector erase time 0.3 / 0.6 seconds to
0.8 / 2 seconds for typical and maximum
(3) Change Chip erase time 4.8 / 9.6 seconds to 10 / 20
seconds for typical and maximum
This Data Sheet may be revised by subsequent versions ₃₀ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2006/12/25