EN25P80 Datasheet, PDF (1/30 Pages) Eon Silicon Solution Inc. – 8 Mbit Uniform Sector, Serial Flash Memory

EN25P80
8 Mbit Uniform Sector, Serial Flash Memory
EN25P80
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 8 Mbit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- Sixteen 64-Kbyte sectors
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 800ms typical
- Chip erase time: 10 Seconds typical
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25P80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25P80 is designed to allow either single Sector at a time or full chip erase operation. The
EN25P80 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions ₁
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/25