EN25P80 Datasheet, PDF (15/30 Pages) Eon Silicon Solution Inc. – 8 Mbit Uniform Sector, Serial Flash Memory

EN25P80
Bulk Erase (BE) (C7h)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 13.. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Bulk Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Bulk Erase cycle (whose duration is t_BE) is
initiated. While the Bulk Erase cycle is in progress, the Status Register may be read to check the value of
the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk Erase cycle,
and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The Bulk
Erase (BE) instruction is ignored if one, or more, sectors are protected.
This Data Sheet may be revised by subsequent versions ₁₅ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2006/12/25