EN29LV160 Datasheet, PDF (27/45 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Test Conditions
Device Under Test
C_L
EN29LV160
3.3 V
2.7 kΩ
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Test Specifications
Test Conditions
-70
-90
Unit
Output Load
1 TTL Gate
Output Load Capacitance, C_L
30
100
pF
Input Rise and Fall times
5
5
ns
Input Pulse Levels
0.0-3.0 0.0-3.0
V
Input timing measurement
reference levels
1.5
1.5
V
Output timing measurement
reference levels
1.5
1.5
V
AC CHARACTERISTICS
Hardware Reset (Reset#)
Parameter
Std
t_READY
t_READY
t_RP
t_RH
Description
Reset# Pin Low to Read or Write
Embedded Algorithms
Reset# Pin Low to Read or Write
Non Embedded Algorithms
Reset# Pulse Width
Reset# High Time Before Read
Test
Setup
Max
Max
Min
Min
Speed options
Unit
-70
-90
20
µs
500
nS
500
nS
50
nS
This Data Sheet may be revised by subsequent versions ₂₇ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2004/03/30