EN29LV160 Datasheet, PDF (16/45 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV160
DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status” for more
information. The Autoselect command is not supported during Erase Suspend Mode.
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command are
ignored. Another Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7
DATA Polling
The EN29LV160 provides DATA Polling on DQ7 to indicate to the host system the status of the
embedded operations. The DATA Polling feature is active during the Byte Programming, Sector
Erase, Chip Erase, Erase Suspend. (See Table 6)
When the Byte Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the Byte Programming, an
attempt to read the device will produce the true data last written to DQ7. For the Byte Programming,
DATA polling is valid after the rising edge of the fourth WE or CE pulse in the four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7
output during the read. For Chip Erase, the DATA polling is valid after the rising edge of the sixth
W E or CE pulse in the six-cycle sequence. For Sector Erase, DATA polling is valid after the last
rising edge of the sector erase W E or C E pulse.
DATA Polling must be performed at any address within a sector that is being programmed or
erased and not a protected sector. Otherwise, DATA polling may give an inaccurate result if the
address used is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when
the output enable ( OE ) is low. This means that the device is driving status information on DQ7 at
one instant of time and valid data at the next instant of time. Depending on when the system
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing
diagram is shown in Figure 8.
RY/BY: Ready/Busy
The RY/BY is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is
in progress or complete. The RY/BY status is valid after the rising edge of the final WE pulse in the
command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together
in parallel with a pull-up resistor to Vcc.
In the output is low, signifying Busy, the device is actively erasing or programming. This includes
programming in the Erase Suspend mode. If the output is high, signifying the Ready, the device is
ready to read array data (including during the Erase Suspend mode), or is in the standby mode.
This Data Sheet may be revised by subsequent versions ₁₆ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2004/03/30