EN29LV160 Datasheet, PDF (11/45 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV160
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
54h
0000h Max. number of byte in multi-byte write = 2^N
2Bh
56h
0000h (00h = not supported)
2Ch
58h
0004h Number of Erase Block Regions within device
2Dh
5Ah
0000h
2Eh
5Ch
0000h Erase Block Region 1 Information
2Fh
5Eh
0040h (refer to the CFI specification of CFI publication 100)
30h
60h
0000h
31h
62h
0001h
32h
33h
64h
66h
0000h
0020h
Erase Block Region 2 Information
34h
68h
0000h
35h
6Ah
0000h
36h
37h
6Ch
6Eh
0000h
0080h
Erase Block Region 3 Information
38h
70h
0000h
39h
72h
001Eh
3Ah
3Bh
74h
76h
0000h
0000h
Erase Block Region 4 Information
3Ch
78h
0001h
Adresses
(Word Mode)
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Ah
4Bh
4Ch
Table 8. Primary Vendor-specific Extended Query
Addresses
(Byte Mode)
Data
Description
80h
0050h
82h
0052h Query-unique ASCII string “PRI”
84h
0049h
86h
0031h Major version number, ASCII
88h
0030h Minor version number, ASCII
8Ah
0000h
Address Sensitive Unlock
0 = Required, 1 = Not Required
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
92h
0004h 01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
This Data Sheet may be revised by subsequent versions ₁₁ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2004/03/30